HOT-PHONON REABSORPTION BY FREE-CARRIERS IN QUANTUM-WELLS

被引：2

作者：

BROCKMANN, P

YOUNG, JF

HAWRYLAK, P

VANDRIEL, HM

机构：

[1] ONTARIO LASER & LIGHTWAVE RES CTR, TORONTO M5S 1A7, ON, CANADA

[2] UNIV BRITISH COLUMBIA, DEPT PHYS, VANCOUVER V6T 1Z1, BC, CANADA

[3] NATL RES COUNCIL CANADA, INST MICROSTRUCT SCI, OTTAWA K1A 0R6, ONTARIO, CANADA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5S/094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of a quasi-equilibrium electron-hole plasma on the population lifetime of non-equilibrium longitudinal optic (LO) phonons is studied in GaAs quantum wells using a multiple-beam Raman scattering technique to separately control the phonon generation and free-carrier injection processes. The lifetime of non-equilibrium, small-wavevector LO phonons is found to decrease from 4.5 ps to 1.9 ps as the density of the cold plasma is increased to approximately 3 x 10(11) cm-2 by adjusting the intensity of an infrared laser tuned close to the lowest subband gap of the quantum wells.

引用

页码：746 / 748

页数：3

共 9 条

[1]

BOGANI F, 1992, I PHYS C SER, V126, P203

[2] DIRECT MEASUREMENTS OF MANY-BODY EFFECTS ON FREE-CARRIER - LO-PHONON INTERACTIONS IN GAAS QUANTUM-WELLS [J].