MICROSTRUCTURE CHARACTERIZATION OF SOL-GEL DERIVED PZT FILMS

被引:17
作者
HIGUCHI, K [1 ]
MIYAZAWA, K [1 ]
SAKUMA, T [1 ]
SUZUKI, K [1 ]
机构
[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO,JAPAN
关键词
D O I
10.1007/BF01162503
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The crystallization of sol-gel derived amorphous PZT films deposited on a MgO single-crystal substrate and a SiO2 glass substrate was examined. The pyrochlore crystallites, 5 nm in size, were homogeneously nucleated in the amorphous films at 350 degrees C. The nucleation temperature of pyrochlore did not depend on the type of substrate. Fine pyrochlore grains were stable even during annealing at high temperatures up to 600 degrees C. The perovskite formation temperature was dependent on the substrate, and was about 550 degrees C on the MgO single-crystal substrate and about 750 degrees C on the: SiO2 glass substrate. The perovskite was heterogeneously nucleated preferentially at the substrate-film interface. Perovskite nucleation was more difficult at the SiO2 glass-film interface than at the MgO single crystal-film interface. The ease of nucleation reflected the perovskite formation temperature. Perovskite crystals grew fairly rapidly, once they were nucleated in the films. In the multiple-coated films, the interface between successive layers of PZT films was a favourable nucleation site of perovskite, and the columnar perovskite grains passing through the interface were often developed.
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页码:436 / 441
页数:6
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