QUANTITATIVE-DETERMINATION OF THE VALLEY SPLITTING IN N-TYPE INVERTED SILICON (100) MOSFET SURFACES

Shubnikov‐de Haas oscillations including an abrupt phase shift of the extrema position at a critical magnetic field are reproduced by computer simulation allowing a quantitative evaluation of the spin and valley splittings Δs and Δv with a high accuracy. Varying the gate voltage and tilt angle of a sample in the magnetic field data are obtained over a wide field range. The computer simulation also permits to check the assumptions about the magnetic field dependence of the energy width and the shape of the broadened levels in quantizing magnetic and electric fields. The results obtained for Δs and Δv both depend on the history of even the same sample. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA