VERTICALLY INTEGRATED SILICON-ON-INSULATOR WAVE-GUIDES

被引：35

作者：

SOREF, RA

CORTESI, E

NAMAVAR, F

FRIEDMAN, L

机构：

[1] SPIRE CORP, BEDFORD, MA 01730 USA

[2] WORCESTER POLYTECH INST, DEPT ELECT ENGN, WORCESTER, MA 01609 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 01期

关键词：

D O I：

10.1109/68.68036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new SiO2-Si-SiO2-Si-SiO2-Si structure produced by the SIMOX process is used for dual, vertically integrated waveguiding in silicon at lambda = 1.3-mu-m. Independent waveguiding is observed when 2-mu-m-thick Si cores are separated by 0.36-mu-m-thick SiO2. Coupled waveguiding is found for an 0.12-mu-m intercore oxide thickness.

引用

页码：22 / 24

页数：3

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