GROWTH OF SEMICONDUCTING TERNARY THIN-FILMS OF AGSBTE2

被引：11

作者：

LAKSHMINARAYANA, D

机构：

[1] Department of Electronics, Sardar Patel University, Vallabh Vidyanagar

来源：

THIN SOLID FILMS | 1991年 / 201卷 / 01期

关键词：

D O I：

10.1016/0040-6090(91)90157-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bulk AgSbTe2 was prepared by melting the constituent elements in stoichiometric proportions. The ternary composition thus obtained was found to possess an NaCl-type structure. This composition when evaporated thermally in vacuum onto sodium chloride cleavage surfaces was found to lead to the formation of two-phase films with AgSbTe2 as the major phase. However, monophase AgSbTe2 films could be obtained by suitably adjusting the starting material composition. The effects of thermal annealing and condensation temperature on the stability of the single phase were studied through electron diffraction.

引用

页码：91 / 96

页数：6

共 12 条

[1]

Armstrong R., 1960, J APPL PHYS, V31, P1954

[2]

Astakhov O. P., 1974, Inorganic Materials, V10, P1492

[3] CONCERNING AN INTERMEDIATE PHASE IN AG-SB-TE SYSTEM [J].