ELECTRICAL-CONDUCTIVITY AND WIGNER CRYSTALLIZATION

被引：58

作者：

PAALANEN, MA

WILLETT, RL

RUEL, RR

LITTLEWOOD, PB

WEST, KW

PFEIFFER, LN

机构：

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.45.13784

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the temperature dependence of both the dc resistance and the rf conductivity for several high-quality two-dimensional GaAs/AlxGa1-xAs electron samples in the high-magnetic-field Wigner-crystallization regime. We have found an increase in the activation energy of the dc resistance at the temperature where the dynamical conductivity becomes frequency dependent. We interpret this temperature as the melting temperature of the Wigner crystal and discuss the conduction mechanisms on both sides of the transition.

引用

页码：13784 / 13787

页数：4

共 15 条

[1]

ANDREI EY, 1988, PHYS REV LETT, V60, P2767

[2] EFFECT OF COEXISTENCE OF RANDOM POTENTIAL AND ELECTRON-ELECTRON INTERACTION IN 2-DIMENSIONAL SYSTEMS - WIGNER GLASS [J].