ODMR Study of Recombination Processes in Ionic Crystals and Silicon Carbide

被引：32

作者：

Baranov, P. G. ^{[1
]}

Romanov, N. G. ^{[1
]}

机构：

[1] Russian Acad Med Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

APPLIED MAGNETIC RESONANCE | 1991年 / 2卷 / 02期

关键词：

D O I：

10.1007/BF03166047

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

The paper presents the results of optically detected magnetic resonance (ODMR) study of tunneling and photostimulated recombination processes in irradiated ionic crystals, observation of resonance effects using optically pumped F-centres, and investigation of spin-dependent recombination processes in silicon carbide doped with boron, aluminium, gallium and scandium.

引用

页码：361 / 378

页数：18

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