PHOTOVOLTAIC EFFECT IN LEAD SELENIDE P-N-JUNCTIONS

被引：13

作者：

CHAMBOULEYRON, I ^{[1
]}

BESSON, JM ^{[1
]}

BALKANSKI, M ^{[1
]}

机构：

[1] UNIV PARIS VI, CNRS, LAB PHYS SOLIDES, PARIS 5EME, FRANCE

来源：

关键词：

D O I：

10.1063/1.1662737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3222 / 3227

页数：6

共 19 条

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[3] CHAMBOULEYRON I, 1968, 9 P INT C PHYS SEM, P546
[4] CHAMBOULEYRON I, 1970, THESIS PARIS U
[5] PHOTOVOLTAIC EFFECT IN P-N JUNCTIONS
CUMMEROW, RL
[J]. PHYSICAL REVIEW, 1954, 95 (01): : 16 - 21
[6] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT
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HARMAN, TC
FOYT, AG
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 259 - &
[7] DUBROVSKAYA IN, 1968, SOV PHYS SEMICOND+, V2, P436
[8] THE ABSORPTION SPECTRA OF SINGLE CRYSTALS OF LEAD SULPHIDE, SELENIDE AND TELLURIDE
GIBSON, AF
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1952, 65 (389): : 378 - 388
[9] Igaki K., 1963, J PHYS SOC JAPAN S2, V18, P143
[10] A PHOTOSENSITIVE SINGLE CRYSTAL P-N JUNCTION IN LEAD SELENIDE
KIMMITT, MF
PRIOR, AC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (11) : 1034 - 1038