RELATIONSHIP BETWEEN PHOTODARKENING AND LIGHT-INDUCED ESR IN AMORPHOUS GE-S FILMS ALLOYED WITH LEAD

被引：11

作者：

MASUDA, A

KUMEDA, M

SHIMIZU, T

机构：

[1] Department of Electronics, Kanazawa University, Kanazawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6B期

关键词：

PHOTODARKENING; LIGHT-INDUCED ESR; OPTICAL BAND GAP; LONE PAIR ELECTRONS; NEGATIVE EFFECTIVE ELECTRON CORRELATION ENERGY; CHARGED DEFECTS; BOND-BREAKING; PHOTOSTRUCTURAL CHANGE; GE-S ALLOYED WITH LEAD; SQUARE-ROOT-B-VALUE;

D O I：

10.1143/JJAP.30.L1075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It had been reported that lead alloying causes the disappearance of PD in Ge-S films. However, it was confirmed that LESR continues to exist in spite of the disappearance of the PD. For Ge-S films without lead, the LESR was observed by irradiation, the intensity of which is not so strong as that giving rise to the PD. It also turned out that the density of defects, including neutral and charged ones at room temperature, remains constant after strong irradiation at low temperature. From these results, it has become apparent that in Ge-S system the PD does not originate from bond-breaking.

引用

页码：L1075 / L1078

页数：4

共 12 条

[1]

BARANOVSKII SD, 1984, SOV PHYS SEMICOND+, V18, P633

[2] PHOTOINDUCED DEFECTS IN CHALCOGENIDE GLASSES [J].