AN ORIGIN OF KL ABSORPTION-EDGE IN SI-K-XAFS

被引：4

作者：

NAKANO, A ^{[1
]}

OGATA, K ^{[1
]}

NAGASHIMA, N ^{[1
]}

机构：

[1] NIHON UNIV,COLL ENGN,KORIYAMA,FUKUSHIMA 96311,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

AMORPHOUS; CRYSTALLINE; MICROCRYSTALLINE SI; XAFS; X-RAY DIFFRACTION;

D O I：

10.7567/JJAPS.32S2.70

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A small jump of X-ray absorption is observed at about 130eV above the a-Si:H K edge. The jump was explained as a multielectron excitation, which is identified as a 1s2p-->3p'epsilon(p) transition. The jump is called as KL absorption edge. XAFS spectra of a-Si, a-Si:H thin films and single crystal Si films are observed using synchrotron radiation. The energy of the jump is measured and determined as 136eV above the K edge. The observed energy suggests that the small jump of X-ray absorption indicates the existence of microcrystalline Si in the a-Si and a-Si:H thin films.

引用

页码：70 / 72

页数：3

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