UNDOPED SEMI-INSULATING LEC GAAS - A MODEL AND A MECHANISM

被引：45

作者：

OLIVER, JR ^{[1
]}

FAIRMAN, RD ^{[1
]}

CHEN, RT ^{[1
]}

YU, PW ^{[1
]}

机构：

[1] WRIGHT STATE UNIV,DAYTON,OH 45435

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 22期

关键词：

D O I：

10.1049/el:19810584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：839 / 841

页数：3

共 8 条

[1]

AUCOIN TR, 1979, SOLID STATE TECHNOL, V22, P59

[2] ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE [J].

BLANC, J ;

WEISBERG, LR .

NATURE, 1961, 192 (479) :155-&

[3]

FAIRMAN RD, 1980, P SEMI INSULATING 3

[4]

FAIRMAN RD, 1979, 7TH P BIENN CORN C S

[5] COMPENSATION MECHANISMS IN GAAS [J].

MARTIN, GM ;

FARGES, JP ;

JACOB, G ;

HALLAIS, JP ;

POIBLAUD, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[6]

SWIGGERT EM, 1976, I PHYSICS C B, V33

[7]

THOMAS RH, 1980, P SEMI INSULATING 3

[8] LUMINESCENCE OF GAAS GROWN IN OXYGEN [J].

TURNER, WJ ;

AINSLIE, NG ;

PETTIT, GD .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) :3274-&

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