RECOMBINATION MECHANISMS IN GAN-ZN

被引：18

作者：

BOULOU, M

FURTADO, M

JACOB, G

BOIS, D

机构：

[1] Laboratoire d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3, Avenue Descartes

来源：

JOURNAL OF LUMINESCENCE | 1979年 / 18-9卷 / JAN期

关键词：

D O I：

10.1016/0022-2313(79)90232-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Investigations on luminescent properties of GaN:Zn are reported. The different emission bands: blue (2.85 eV), green (2.5 eV), yellow (2.2 eV) and red (1.9 eV) as well as their efficiency are correlated with the Zn concentration in the range of 1018 to 6×1020 cm-3. The recombinations observed, using cathodoluminescence analysis, are consistent with a pair transition model with a strong phonon coupling. Moreover, photocapacitance measurements on devices show that a p-type conduction is possible in GaN:Zn. © 1979.

引用

页码：767 / 770

页数：4

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