未找到相关数据
AR ION IMPLANT DAMAGE GETTERING OF GENERATION IMPURITIES IN SILICON EMPLOYING VOLTAGE RAMPING AND NITROGEN BACKSCATTERING
被引：8
作者：
GOLJA, B
NASSIBIAN, AG
机构：
来源：
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES
|
1979年
/
3卷
/
05期
关键词：
Compilation and indexing terms;
Copyright 2025 Elsevier Inc;
D O I：
10.1049/ij-ssed.1979.0027
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
The effects of Ar-ion implant gettering has been investigated using the linear voltage ramp applied to m. o. s. capacitors. A comparison is made with control (not implanted) samples and N** plus -ion Rutherford backscattering is used to examine the precipitation of generation impurities by the damaged layers. The gettering anneals were carried out over the temperature range 950-1100 degree C and for various times from 15 min to 120 min. It is shown that long gettering anneal times and high anneal temperatures both have a detrimental effect on minority-carrier lifetime.
引用
收藏
页码：127 / 132
页数：6
相关论文