LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS

被引:22
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WEINER, ME
LASSOTA, DT
SCHWARTZ, B
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10.1149/1.2408023
中图分类号
O646 [电化学、电解、磁化学];
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081704 ;
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页码:301 / &
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共 15 条
[1]  
BASS SJ, 1966, P INT S GALLIUM ARSE, P41
[2]   ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE [J].
BLANC, J ;
WEISBERG, LR .
NATURE, 1961, 192 (479) :155-&
[3]   REACTIONS OF GALLIUM WITH QUARTZ AND WITH WATER VAPOR, WITH IMPLICATIONS IN THE SYNTHESIS OF GALLIUM ARSENIDE [J].
COCHRAN, CN ;
FOSTER, LM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :149-154
[4]   PROPERTIES OF SEMI-INSULATING GAAS [J].
GOOCH, CH ;
HOLEMAN, BR ;
HILSUM, C .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2069-&
[5]  
Grove A S, 1967, PHYS TECHNOL S, P103
[6]  
HANSEN M, 1958, CONSTITUTION BINARY, P175
[7]   TECHNIQUE FOR PULLING SINGLE CRYSTALS OF VOLATILE MATERIALS [J].
METZ, EPA ;
MAZELSKY, R ;
MILLER, RC .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2016-+
[8]   LIQUID ENCAPSULATION TECHNIQUES - USE OF AN INERT LIQUID IN SUPPRESSING DISSOCIATION DURING MELT-GROWTH OF INAS AND GAAS CRYSTALS [J].
MULLIN, JB ;
STRAUGHAN, BW ;
BRICKELL, WS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (04) :782-+
[9]  
REISS H, 1959, PROPERTIES ELEMENTAL, V5, P103
[10]   STRUCTURE OF B2O3 AND BINARY ALUMINOBORATE MELTS AT 1600 DEGREES C [J].
RIEBLING, EF .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1966, 49 (01) :19-&