ELECTRON MOBILITY IN HEAVILY DOPED GALLIUM-ARSENIDE

被引：12

作者：

STEVENS, EH

YEE, SS

机构：

[1] UNIV IDAHO,DEPT ELECT ENGN,MOSCOW,ID 83843

[2] UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98105

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.1662249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：715 / 722

页数：8

相关论文

共 22 条

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