SURFACE RELATED DEGRADATION OF INP-BASED HEMTS DURING THERMAL-STRESS

被引：11

作者：

ASHIZAWA, Y ^{[1
]}

NOZAKI, C ^{[1
]}

NODA, T ^{[1
]}

SASAKI, A ^{[1
]}

FUJITA, S ^{[1
]}

机构：

[1] JOINT RES CTR ATOM TECHNOL, ANGSTROM TECHNOL PARTNERSHIP, TSUKUBA, IBARAKI 305, JAPAN

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 09期

关键词：

INP; HEMT; SURFACE; SIN;

D O I：

10.1016/0038-1101(95)00057-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Degradation of unpassivated InP HEMTs related to the surface of InAlAs was studied. In ungated HEMTs, the drain current decreased after annealing at temperatures as low as 250 degrees C. RES measurements revealed that lattice disorder was induced on the surface of InAlAs during thermal treatment, which was considered to be due to either the introduction of vacancies or In segregation. Surface-related degradation was effectively suppressed by passivating devices with SiN layers.

引用

页码：1627 / 1630

页数：4

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