MAGNETOPHONON OSCILLATIONS IN MAGNETORESISTANCE OF EPITAXIAL N-GAAS

被引：9

作者：

SHERWOOD, NT

BECKER, WM

机构：

[1] Department of Physics, Purdue University, Lafayette, IN

来源：

PHYSICS LETTERS A | 1968年 / A 27卷 / 03期

关键词：

D O I：

10.1016/0375-9601(68)91182-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The longitudinal and transverse magnetoresistance of epitaxial n-GaAs of mobility 2.8 × 104 and 7.8 × × 104 cm2/V-sec (77°K) exhibit oscillations due to the scattering of electrons on optical and acoustic phonons. These oscillations are investigated in magnetic fields up to 170 kG and in the temperature range 80°K to 200°K. © 1990.

引用

页码：161 / &

共 5 条

[1] OSCILLATIONS OF LONGITUDINAL MAGNETORESISTANCE IN N-GAAS
AKSELROD, MM
SOKOLOV, VI
TSIDILKOVSKI, IM
[J]. PHYSICA STATUS SOLIDI, 1965, 9 (03): : K163 - +
[2] EFFECTIVE MASS OF ELECTRONS IN N-GAAS
EMELYANENKO, OV
NASLEFOV, DN
SIDOROV, VG
SKRIPKIN, VA
TALALAKIN, GN
[J]. PHYSICA STATUS SOLIDI, 1965, 12 (02): : K93 - +
[3] GUREVICH VL, 1965, SOV PHYS JETP-USSR, V20, P489
[4] DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS
HALL, RN
RACETTE, JH
EHRENREICH, H
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (09) : 456 - 458
[5] TSIDILKO.IM, 1966, J PHYS SOC JPN, VS 21, P362

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