IMPROVEMENT OF CARRIER INJECTION EFFICIENCY IN A-SIC P-I-N LED USING HIGHLY-CONDUCTIVE WIDE-GAP P,N-TYPE A-SIC PREPARED BY ECR CVD

被引：53

作者：

KRUANGAM, D

TOYAMA, T

HATTORI, Y

DEGUCHI, M

OKAMOTO, H

HAMAKAWA, Y

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90070-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：293 / 296

页数：4

共 7 条

[1]

HATTORI Y, 1987, J NONCRYSTALLINE S 1, V97

[2]

HATTORI Y, 1987, 19TH IEEE PHOT SPEC

[3] A STUDY OF VISIBLE-LIGHT INJECTION-ELECTROLUMINESCENCE IN A-SIC/P-I-N DIODE [J].

KRUANGAM, D ;

ENDO, T ;

WEI, GP ;

NONOMURA, S ;

OKAMOTO, H ;

HAMAKAWA, Y .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1429-1432

[4] VISIBLE-LIGHT INJECTION-ELECTROLUMINESCENT A-SIC/P-I-N DIODE [J].

KRUANGAM, D ;

ENDO, T ;

WEI, GP ;

OKAMOTO, H ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10) :L806-L808

[5]

KRUANGAM D, 1986, 18TH C SOL STAT DEV, P683

[6]

KRUANGAM D, 1987, SPR P M MAT RES SOC

[7]

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