MAPPING OF EL2-RELATED LUMINESCENCE ON SEMI-INSULATING GAAS WAFERS AT ROOM-TEMPERATURE

被引：14

作者：

TAJIMA, M ^{[1
]}

机构：

[1] ELECTROTECH LAB, TSUKUBA 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 07期

关键词：

D O I：

10.1143/JJAP.27.L1323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1323 / L1326

页数：4

共 7 条

[1] DIRECT OBSERVATION OF FINE-STRUCTURE IN THE CONCENTRATION OF THE DEEP DONOR [EL2] AND ITS CORRELATION WITH DISLOCATIONS IN UNDOPED, SEMI-INSULATING GAAS [J].

BROZEL, MR ;

GRANT, I ;

WARE, RM ;

STIRLAND, DJ ;

SKOLNICK, MS .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1109-1118

[2] GAAS FIELD-EFFECT TRANSISTOR PROPERTIES, AS INFLUENCED BY THE LOCAL CONCENTRATIONS OF MIDGAP NATIVE DONORS AND DISLOCATIONS [J].

DOBRILLA, P ;

BLAKEMORE, JS ;

MCCAMANT, AJ ;

GLEASON, KR ;

KOYAMA, RY .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :602-604

[3] EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE [J].

DOBRILLA, P ;

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :208-218

[4] CONTOUR MAPS OF EL2 DEEP LEVEL IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3588-3594

[5] CORRELATIONS OF PHOTOLUMINESCENCE WITH DEFECT DENSITIES IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

HOVEL, HJ ;

GUIDOTTI, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2331-2338

[6] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[7]

Tajima M., 1987, Oyo Buturi, V56, P1183

← 1 →