HOT-ELECTRON EFFECTS IN SEMICONDUCTOR LUMINESCENCE

[1] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1525 - 1539

[2] BIMBERG D, 1974, VERH DPG, V9, P649

[3] BIMBERG D, 1977, PHYSICA B, V81, P139

[4] OPTICAL DETERMINATION OF CARRIER MOBILITY IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1976, 18 (07) : 861 - 863

[5] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 247 - 249

[6] FAR-INFRARED PHOTOCONDUCTIVITY FROM SHALLOW DONORS IN N-INP [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (18) : 1563 - &

[7] PAIR SPECTRA AND EDGE EMISSION IN ZINC SELENIDE [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1310 - &

[8] HERKO SP, UNPUBLISHED

[9] HOPFIELD JJ, 1965, PHYS REV, V140, pA202

[10] INFLUENCE OF EXCITON IMPACT IONIZATION AND ILLUMINATION INTENSITY ON THE EXCITON-POLARITON REFLECTANCE OF GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4325 - 4331

[1] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1525 - 1539

[2] BIMBERG D, 1974, VERH DPG, V9, P649

[3] BIMBERG D, 1977, PHYSICA B, V81, P139

[4] OPTICAL DETERMINATION OF CARRIER MOBILITY IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1976, 18 (07) : 861 - 863

[5] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 247 - 249

[6] FAR-INFRARED PHOTOCONDUCTIVITY FROM SHALLOW DONORS IN N-INP [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (18) : 1563 - &

[7] PAIR SPECTRA AND EDGE EMISSION IN ZINC SELENIDE [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1310 - &

[8] HERKO SP, UNPUBLISHED

[9] HOPFIELD JJ, 1965, PHYS REV, V140, pA202

[10] INFLUENCE OF EXCITON IMPACT IONIZATION AND ILLUMINATION INTENSITY ON THE EXCITON-POLARITON REFLECTANCE OF GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4325 - 4331