AN ANALYSIS OF DEAD SPACE IN SEMICONDUCTORS

被引：4

作者：

CHILDS, PA

LEUNG, CCC

机构：

[1] Sch. of Electron. and Electr. Eng., Birmingham Univ.

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 41期

关键词：

D O I：

10.1088/0953-8984/3/41/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An analytic expression is derived for the field dependence of 'dead space' in semiconductors in terms of optical phonon energy and mean free path. The basis for the analysis is the energy distribution function of electrons derived by Keldysh. The result is applicable to a range of devices, such as avalanche photodetectors and MOSFETS, where dead space can occupy a significant fraction of the active region.

引用

页码：8053 / 8057

页数：5