ELECTRON AND HOLE INPLANE MOBILITIES IN HGTE-CDTE SUPERLATTICES

被引：34

作者：

MEYER, JR ^{[1
]}

ARNOLD, DJ ^{[1
]}

HOFFMAN, CA ^{[1
]}

BARTOLI, FJ ^{[1
]}

RAMMOHAN, LR ^{[1
]}

机构：

[1] WORCESTER POLYTECH INST,WORCESTER,MA 01609

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.46.4139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a recently developed formalism for free-carrier transport in semiconductor superlattices with interacting quantum wells, we have calculated in-plane mobilities for electrons and holes in HgTe-CdTe heterostructures. Details of the highly nonparabolic and anisotropic band structures are fully incorporated into the theory, and the previous treatment of interface roughness scattering in quasi-two-dimensional structures has been generalized to account for superlattices with significant interwell interactions. Our results accurately account for a number of distinctive features in the experimental data, and good agreement between theory and experiment is obtained.

引用

页码：4139 / 4146

页数：8

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