COMPUTATION OF SEMICONDUCTOR DEVICE CURRENT CHARACTERISTICS BY FINITE-DIFFERENCE METHODS

[1] Ahlberg J., 1967, THEORY SPLINES THEIR

[2] BARRON MB, 1969, SEL69069 STANF EL LA

[3] NUMERICAL METHODS OF HIGH-ORDER ACCURACY FOR NONLINEAR BOUNDARY VALUE PROBLEMS .V. MONOTONE OPERATOR THEORY [J]. NUMERISCHE MATHEMATIK, 1969, 13 (01) : 51 - &

[4] DC NUMERICAL MODEL FOR ARBITRARILY BIASED BIPOLAR TRANSISTORS IN 2 DIMENSIONS [J]. ELECTRONICS LETTERS, 1970, 6 (03) : 53 - &

[5] Forsythe G. E., 1960, FINITE DIFFERENCE ME

[6] GUMMEL HK, 1964, IEEE T, VED11, P455

[7] HEYDEMANN M, 1972, THESIS U PARIS

[8] 2-DIMENSIONAL ANALYSIS OF LATERAL-BASE TRANSISTORS [J]. ELECTRONICS LETTERS, 1971, 7 (09) : 226 - &

[9] KIM CK, 1970, IEEE T ELECTRON DEV, VED17, P120

[10] Ladyzhenskaya O.A., 1968, LINEAR QUASILINEAR E, DOI DOI 10.1090/MMONO/023

[1] Ahlberg J., 1967, THEORY SPLINES THEIR

[2] BARRON MB, 1969, SEL69069 STANF EL LA

[3] NUMERICAL METHODS OF HIGH-ORDER ACCURACY FOR NONLINEAR BOUNDARY VALUE PROBLEMS .V. MONOTONE OPERATOR THEORY [J]. NUMERISCHE MATHEMATIK, 1969, 13 (01) : 51 - &

[4] DC NUMERICAL MODEL FOR ARBITRARILY BIASED BIPOLAR TRANSISTORS IN 2 DIMENSIONS [J]. ELECTRONICS LETTERS, 1970, 6 (03) : 53 - &

[5] Forsythe G. E., 1960, FINITE DIFFERENCE ME

[6] GUMMEL HK, 1964, IEEE T, VED11, P455

[7] HEYDEMANN M, 1972, THESIS U PARIS

[8] 2-DIMENSIONAL ANALYSIS OF LATERAL-BASE TRANSISTORS [J]. ELECTRONICS LETTERS, 1971, 7 (09) : 226 - &

[9] KIM CK, 1970, IEEE T ELECTRON DEV, VED17, P120

[10] Ladyzhenskaya O.A., 1968, LINEAR QUASILINEAR E, DOI DOI 10.1090/MMONO/023