共 2 条
- [1] HERMANN A, 1982, 16TH P IEEE PHOT SPE, P840
- [2] MITCHELL K, 1988, 20TH P IEEE PHOT SPE, P1384
CUINSE2 THIN-FILM PREPARED BY EVAPORATION OF CU2SE AND IN2SE3
被引：6
作者：
ASHIDA, A
HACHIUMA, Y
YAMAMOTO, N
ITO, T
CHO, Y
机构：
[1] College of Engineering, University of Osaka Prefecture, Sakai, Osaka, 593, 1-1, Gakuen-cho
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
1993年
/
32卷
关键词：
CUINSE(2);
CU(2)SE;
IN(2)SE(3);
ELECTRICAL PROPERTIES;
RF PLASMA;
D O I：
10.7567/JJAPS.32S3.84
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Preparation of CuInSe2 thin films by evaporation of In2Se3 and Cu2Se is proposed. Sequential evaporation Of In2Se3 and CU2Se is superior in controlling composition of films and the p-type film with 24 cm2/V.s in Hall mobility is obtained. By heating substrates during deposition and using rf plasma, we have succeeded in obtaining the [112] highly oriented CuInSe2 thin films.
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页码：84 / 85
页数：2
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