ELECTROCHEMICAL PHOTO-VOLTAIC CELLS BASED ON N-GAAS IN PROPYLENE CARBONATE

被引：16

作者：

LANGMUIR, ME

HOENIG, P

RAUH, RD

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 11期

关键词：

D O I：

10.1149/1.2127248

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2357 / 2363

页数：7

共 17 条

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[2]

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[4] STUDY OF N-TYPE SEMICONDUCTING CADMIUM CHALCOGENIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING POLYCHALCOGENIDE ELECTROLYTES [J].

ELLIS, AB ;

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[5]

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[6] EFFECT OF RUTHENIUM IONS ON GRAIN-BOUNDARIES IN GALLIUM-ARSENIDE THIN-FILM PHOTO-VOLTAIC DEVICES [J].

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HELLER, A ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :90-95

[7] SEMICONDUCTOR ELECTRODES .18. LIQUID JUNCTION PHOTO-VOLTAIC CELLS BASED ON N-GAAS ELECTRODES AND ACETONITRILE SOLUTIONS [J].

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[8]

LANGMUIR ME, 1980, 3RD INT C PHOT CONV

[9] STANDARD POTENTIALS OF ALKALI-METALS, SILVER, AND THALLIUM METAL-ION COUPLES IN N,N'-DIMETHYLFORMAMIDE, DIMETHYL-SULFOXIDE, AND PROPYLENE CARBONATE [J].

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[10] ENHANCED PHOTOELECTROCHEMICAL SOLAR-ENERGY CONVERSION BY GALLIUM-ARSENIDE SURFACE MODIFICATION [J].

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