OPTICAL-PROPERTIES AND ORIGIN OF INFRARED LIGHT-SCATTERING CENTERS IN UNDOPED SEMIINSULATING GAAS CRYSTALS

被引:11
作者
KATSUMATA, T
OKADA, H
KIKUTA, T
FUKUDA, T
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 42卷 / 02期
关键词
D O I
10.1007/BF00616718
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:103 / 109
页数:7
相关论文
共 24 条
[1]  
Amelinckx S., 1964, DIRECT OBSERVATION D
[2]   CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J].
BROZEL, MR ;
CLEGG, JB ;
NEWMAN, RC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) :1331-1339
[3]  
HOLMES DE, 1982, P C SEM 3 5 MAT EV F, P19
[4]  
Huglin M.B., 1972, LIGHT SCATTERING POL
[5]  
IKOMA T, 1985, JPN J APPL PHYS 2, V24, pL935, DOI 10.1143/JJAP.24.L935
[6]  
ISHIDA K, 1985, JPN J APPL PHYS, V24, P250
[7]   ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].
KAISER, W .
PHYSICAL REVIEW, 1957, 105 (06) :1751-1756
[8]  
KUMA S, 1985, MATERIALS SCI MONOGR, V31, P19
[9]   ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].
LAGOWSKI, J ;
GATOS, HC ;
PARSEY, JM ;
WADA, K ;
KAMINSKA, M ;
WALUKIEWICZ, W .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344
[10]  
Loudon R., 2000, QUANTUM THEORY LIGHT