LUMINESCENCE STUDIES OF A NEW LINE ASSOCIATED WITH GERMANIUM IN GAAS

被引：38

作者：

WILLIAMS, EW

ELLIOTT, CT

机构：

[1] Royal Radar Establishment, Malvern

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1969年 / 2卷 / 12期

关键词：

D O I：

10.1088/0022-3727/2/12/305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A luminescence line has been observed at 1·454 ev at 20°K in germanium-doped GaAs. Measurements have been made of the peak energy, intensity and half-width as a function of temperature. It is proposed that the centre responsible for the luminescence is an arsenic vacancy bound to a germanium atom on an arsenic site. Preliminary results indicate that a similar centre is present in silicon-doped GaAs grown from a gallium solution.

引用

页码：1657 / &

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