TEMPERATURE DEPENDENCE OF ENERGY GAP IN GAAS AND GAP

被引:280
作者
PANISH, MB
CASEY, HC
机构
[1] Bell Telephone Laboratories, Inc., Murray Hill
关键词
D O I
10.1063/1.1657024
中图分类号
O59 [应用物理学];
学科分类号
摘要
Absorption measurements from 300°-973°K for GaAs and to 1273°K for GaP were made in order to determine the energy gap Eg of these materials at high temperatures. These data, together with previously published results, show that the energy-gap width may be represented by a simple expression for all temperatures. As a function of the absolute temperature T, the direct gap in GaAs is given by Eg=1.522-5.8×10 -4T2 / (T+300) eV, and the indirect gap in GaP is given by Eg=2.338-6.2×10-4T2 / (T+460) eV. The general form of the expression for the energy gap is Eg=E g(0)-aT2 / (T+β), where Eg(0) is the energy gap at 0°K, β is approximately the 0°K Debye temperature, and a is an empirical constant. © 1969 The American Institute of Physics.
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页码:163 / &
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