RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION

被引：96

作者：

NATHAN, MI

BURNS, G

机构：

来源：

关键词：

D O I：

10.1063/1.1753709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：89 / 90

页数：2

共 7 条

[1]

KEYES RJ, 1962, P IRE, V50, P1822

[2]

MAYBURG S, 1962, MAR BALT AM PHYS SOC

[3] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

[4]

NATHAN MI, UNPUB PHYS REV

[5]

PANKOVE JI, 1962, P IRE, V50, P1976

[6]

PANKOVE JI, 1962, B AM PHYS SOC, V7, P88

[7] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].

STURGE, MD .

PHYSICAL REVIEW, 1962, 127 (03) :768-+