RESONANT MODES OF GAAS JUNCTION LASERS .2. HIGH-INJECTION LEVEL

被引:16
作者
PAOLI, TL
RIPPER, JE
ZACHOS, TH
机构
[1] Bell Telephone Laboratories, Inc., Murray Hill, N.J.
关键词
D O I
10.1109/JQE.1969.1081952
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Previous work on the resonant modes of GaAs junction lasers operating near threshold is extended to include spectra obtained at currents 1.5 to 3 times the threshold level. At these currents, two families of modes are shown to oscillate simultaneously with different center frequencies. The modal families are demonstrated to correspond to different mode numbers in the direction perpendicular to the junction plane. These observations are found to be in agreement with a previously reported theory for the GaAs laser cavity, which allows a dielectric constant variation in both directions transverse to the laser axis. The general characteristics of the observed spectra are explained qualitatively in terms of a derived mode dependence of the steady-state gain function. It is suggested that the strong frequency dependence of the spatial gain distribution perpendicular to the junction plane can allow two modal families with different mode numbers perpendicular to the junction to oscillate simultaneously with different center frequencies. Copyright © 1969, by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:271 / +
页数:1
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