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THEORETICAL-STUDY OF THE RAMAN-SPECTRUM IN A-SI1-XNX-H FILMS
被引:7
作者
:
YU, G
论文数:
0
引用数:
0
h-index:
0
YU, G
CHEN, GG
论文数:
0
引用数:
0
h-index:
0
CHEN, GG
ZHANG, FQ
论文数:
0
引用数:
0
h-index:
0
ZHANG, FQ
机构
:
来源
:
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
|
1989年
/ 152卷
/ 01期
关键词
:
D O I
:
10.1002/pssb.2221520108
中图分类号
:
O469 [凝聚态物理学];
学科分类号
:
070205 ;
摘要
:
引用
收藏
页码:73 / 78
页数:6
相关论文
共 3 条
[1]
RAMAN-SCATTERING IN HYDROGENATED AMORPHOUS-SILICON UNDER HIGH-PRESSURE
ISHIDATE, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
ISHIDATE, T
论文数:
引用数:
h-index:
机构:
INOUE, K
TSUJI, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
TSUJI, K
MINOMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
MINOMURA, S
[J].
SOLID STATE COMMUNICATIONS,
1982,
42
(03)
: 197
-
200
[2]
CALCULATION OF PHONON DENSITY OF STATES FOR AMORPHOUS SI
ISHII, N
论文数:
0
引用数:
0
h-index:
0
机构:
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
ISHII, N
KUMEDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
KUMEDA, M
SHIMIZU, T
论文数:
0
引用数:
0
h-index:
0
机构:
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
SHIMIZU, T
[J].
SOLID STATE COMMUNICATIONS,
1984,
50
(04)
: 367
-
370
[3]
EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE
KEATING, PN
论文数:
0
引用数:
0
h-index:
0
KEATING, PN
[J].
PHYSICAL REVIEW,
1966,
145
(02):
: 637
-
&
←
1
→
共 3 条
[1]
RAMAN-SCATTERING IN HYDROGENATED AMORPHOUS-SILICON UNDER HIGH-PRESSURE
ISHIDATE, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
ISHIDATE, T
论文数:
引用数:
h-index:
机构:
INOUE, K
TSUJI, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
TSUJI, K
MINOMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
MINOMURA, S
[J].
SOLID STATE COMMUNICATIONS,
1982,
42
(03)
: 197
-
200
[2]
CALCULATION OF PHONON DENSITY OF STATES FOR AMORPHOUS SI
ISHII, N
论文数:
0
引用数:
0
h-index:
0
机构:
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
ISHII, N
KUMEDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
KUMEDA, M
SHIMIZU, T
论文数:
0
引用数:
0
h-index:
0
机构:
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN
SHIMIZU, T
[J].
SOLID STATE COMMUNICATIONS,
1984,
50
(04)
: 367
-
370
[3]
EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE
KEATING, PN
论文数:
0
引用数:
0
h-index:
0
KEATING, PN
[J].
PHYSICAL REVIEW,
1966,
145
(02):
: 637
-
&
←
1
→