STRAIN SPLITTING OF THE X-CONDUCTION-BAND VALLEYS AND QUENCHING OF SPIN-VALLEY INTERACTION IN INDIRECT GAAS/ALXGA1-XAS-SI HETEROSTRUCTURES

被引：9

作者：

KAUFMANN, U ^{[1
]}

WILKENING, W ^{[1
]}

MOONEY, PM ^{[1
]}

KUECH, TF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.41.10206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report electron-paramagnetic-resonance results for the shallow effective-mass 1s(T2) state of the Si donor associated with the X valleys in indirect-band-gap (x0.4) AlxGa1-xAs:Si layers grown on GaAs. The data confirm definitely that the heteroepitaxial strain splits the three X valleys such that the Xz valley lies above the Xx and Xy valleys. An independent-valley model perfectly accounts for the properties of the donor resonance over the full indirect-band-gap range of the alloy without inclusion of the spin-valley interaction. This effect is attributed to small local, random in-plane strains which quench the first-order spin-valley splitting. © 1990 The American Physical Society.

引用

页码：10206 / 10209

页数：4

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