SODIUM-INDUCED H+ ION RESONANCE ON SILICON SURFACES

被引:1
作者
HURYCH, Z
SOUKIASSIAN, P
KAPOOR, S
MANGAT, PS
KIM, ST
PENG, J
BOURDIE, E
机构
[1] NO ILLINOIS UNIV,DEPT PHYS,DE KALB,IL 60115
[2] CENS,CEA,SERV RECH SURFACES & IRRADIAT MAT,F-91191 GIF SUR YVETTE,FRANCE
[3] UNIV PARIS 11,DEPT PHYS,F-91405 ORSAY,FRANCE
基金
美国国家科学基金会;
关键词
D O I
10.1016/0039-6028(94)90824-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present the first observation of an ion resonance, H+, desorbed from Na overlayers on Si(100)2 X 1 and Si(111)2 x 1 surfaces by means of photon stimulated ion desorption (PSD). This resonance occurs at a photon energy corresponding to the excitation of the Na 2p core level and is much stronger than the corresponding interband electronic excitations initiating the PSD process. This H+ ion resonance, which is unique to Na on Si surfaces, is quenched by coadsorption of other alkali metals, while it is strongly enhanced by the presence of an electron acceptor specie as oxygen. It is associated with the dielectric response of the near surface region including a spectator photoelectron within the Si-Na-H interface complex) at the Na 2p core level threshold.
引用
收藏
页码:L293 / L298
页数:6
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