SURFACE-BARRIER FORMATION FOR AL CHEMISORBED ON GAAS(110)

被引：40

作者：

MELE, EJ ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

机构：

[1] MIT, DEPT PHYS, CAMBRIDGE, MA 02139 USA

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.42.1094

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using a localized orbital theory, we have studied the electronic and electrical properties of A1 chemisorbed on GaAs(110). We find that both the microscopic data and the macroscopic induced barrier are fully explained by the electronic structure of a new Al-As-Ga complex on the surface. This complex results from an exchange reaction in which Al replaces the surface Ga and an unexpected structural relaxation induced by the chemisorption of the metal. © 1979 The American Physical Society.

引用

页码：1094 / 1097

页数：4

共 17 条

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