SINGLE-CRYSTAL GROWTH OF LAYERED TIN MONOSELENIDE SEMICONDUCTOR USING A DIRECT VAPOR TRANSPORT TECHNIQUE

Single crystals of layered tin monoselenide were grown by a direct vapour transport technique. Electron and X-ray diffraction techniques were used for the confirmation of single crystallinity and lattice parameter determination respectively. The crystals were found to be p-type semiconducting in nature with an indirect character of the optical band gap. The stability of the SnSe phase was investigated using differential thermal and thermogravimetric analyses. The measurements of thermoelectric power and resistivity enabled the determination of both carrier mobility and carrier concentration. The variation of carrier concentration and carrier mobility with temperature indicated the presence of deep acceptor levels and lattice or phonons as the dominant scattering mechanism in these crystals.