FACET EFFECT IN EPITAXIAL GAAS

被引：5

作者：

JOYCE, BD

MULLIN, JB

机构：

来源：

SOLID STATE COMMUNICATIONS | 1967年 / 5卷 / 09期

关键词：

D O I：

10.1016/0038-1098(67)90359-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：727 / &

共 12 条

[1]

BARDSLEY W, 1966, JUN P INT C CRYST S

[2] ANNULAR FACETS AND IMPURITY STRIATIONS IN TELLURIUM-DOPED GALLIUM ARSENIDE [J].

CRONIN, GR ;

LARRABEE, GB ;

OSBORNE, JF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :292-&

[3] CROSS-SECTIONAL RESISTIVITY VARIATIONS IN GERMANIUM SINGLE CRYSTALS [J].

DIKHOFF, JAM .

SOLID-STATE ELECTRONICS, 1960, 1 (03) :202-&

[4] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J].

FINCH, WF ;

MEHAL, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :814-817

[5]

GROVES WO, 1966, JUN P C CRYST GROW S

[6] DISTRIBUTION COEFFICIENTS OF IMPURITIES IN GALLIUM ANTIMONIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) :856-&

[7] FACETS AND ANOMALOUS SOLUTE DISTRIBUTIONS IN INDIUM-ANTIMONIDE CRYSTALS [J].

HULME, KF ;

MULLIN, JB .

PHILOSOPHICAL MAGAZINE, 1959, 4 (47) :1286-1288

[8] CONSTITUTIONAL SUPERCOOLING AND FACET FORMATION OF GAAS [J].

LEMAY, CZ .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :439-&

[9] SUBSTRATE ORIENTATION EFFECT ON IMPURITY PROFILES OF EPITAXIAL GAAS FILMS [J].

MOEST, RR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) :141-&

[10]

MULLIN JW, UNPUBLISHED WORK

← 1 2 →