OMVPE OF ZN-BASED II-IV SEMICONDUCTORS USING METHYLMERCAPTAN AS A NOVEL SULFUR SOURCE

被引：28

作者：

FUJITA, S

ISEMURA, M

SAKAMOTO, T

YOSHIMURA, N

机构：

[1] Kyoto Univ, Kyoto, Jpn, Kyoto Univ, Kyoto, Jpn

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

CRYSTALS - Epitaxial Growth - MICROSCOPIC EXAMINATION - PHOTOLUMINESCENCE;

D O I：

10.1016/0022-0248(90)90727-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The use of a novel sulfur source, methylmercaptan, CH//3SH (MSH), for OMVPE growth of ZnS and Zn(S,Se) has been developed for the first time. Gas-phase prereaction was not observed, and the growth temperature of ZnS was successfully reduced, compared with growth using dialkyl-compounds. Zn(S,Se) alloy epilayers lattice-matched to GaAs substrates had specular surface morphology, excellent crystallographic properties, and showed strong excitonic emissions but weak intensities of deep level emissions.

引用

页码：263 / 267

页数：5

共 12 条

[1]

BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2

[2] THE GROWTH BY MOCVD USING NEW GROUP-VI SOURCES AND ASSESSMENT BY HRTEM AND CL OF ZN-BASED II-VI SINGLE-CRYSTAL LAYERS [J].