ELECTRONIC 1SO VACANCY PRODUCTION IN DEEP-INELASTIC NUCLEAR-REACTIONS

被引:20
作者
ANHOLT, R
机构
[1] Department of Physics, Stanford University, Stanford
关键词
D O I
10.1016/0370-2693(79)90462-3
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
Calculations are made of the probability of creating 1sσ (Bi K) vacancies in 1130 MeV Xe + Bi collisions at impact parameters b leading to deep-inelastic nuclear reactions. Due to the finite sticking time of the composite system, the probability may be an oscillatory function of b. © 1979.
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页码:262 / 264
页数:3
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