NICKEL THIN-FILMS GROWN BY MOCVD USING NI(DMG)(2) AS PRECURSOR

The aim of this study was (i) to investigate alternatives to the very toxic Ni(CO)(4), (ii) optimization of the parameters for Ni film growth, and (iii) characterization of the film morphology. The thermal behaviour of the precursors bis(dimethylglyoximato)Ni(II), [Ni(dmg)(2)], bis(2,2,6,6-tetramethyl-3,5-heptandionato [Ni(thd)(2)], N,N'-ethylenebis(2,4-pentandioniminoato)Ni(II), [Ni(enacac)], and bis(2-amino-pent-2-en-4-onato)Ni(II), [Ni(apo)(2)] were investigated in a model reactor. Furthermore, the evaporation rates of these compounds were determined. Metallic nickel films were obtained using Ni(dmg)(2) as precursor. The deposition was carried out in a horizontal quartz reactor at reduced pressure in a hydrogen/helium atmosphere. The films were analysed by profilometry, X-ray diffraction, atomic force microscopy (AFM), four-point resistivity measurements and electron spectroscopy for chemical analysis (ESCA). Comparison of the AFM and ESCA data with the electrical resistances resulted in a two layer film model.