ENHANCEMENT OF BREMSSTRAHLUNG PRODUCED BY 575-MEV ELECTRONS IN A SINGLE CRYSTAL OF SILICON

被引:13
作者
SAXENA, AN
机构
关键词
D O I
10.1103/PhysRevLett.4.311
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:311 / 312
页数:2
相关论文
共 8 条
[1]   ELECTRON PAIR PRODUCTION AT HIGH ENERGY IN A SILICON SINGLE CRYSTAL [J].
BOLOGNA, G ;
DIAMBRINI, G ;
MURTAS, GP .
PHYSICAL REVIEW LETTERS, 1960, 4 (03) :134-135
[2]   ANISOTROPY OF BREMSSTRAHLUNG AND PAIR PRODUCTION IN SINGLE CRYSTALS [J].
DYSON, FJ ;
UBERALL, H .
PHYSICAL REVIEW, 1955, 99 (02) :604-605
[3]   DETECTION OF COHERENT BREMSSTRAHLUNG FROM CRYSTALS [J].
FRISCH, OR ;
OLSON, DN .
PHYSICAL REVIEW LETTERS, 1959, 3 (03) :141-142
[4]   SEARCH FOR ENHANCEMENT OF BREMSSTRAHLUNG PRODUCED BY 575-MEV ELECTRONS IN A SINGLE CRYSTAL OF SILICON [J].
PANOFSKY, WKH ;
SAXENA, AN .
PHYSICAL REVIEW LETTERS, 1959, 2 (05) :219-220
[5]  
SCHIFF LI, UNPUB PHYS REV
[6]   A NONSATURABLE HIGH-ENERGY BEAM MONITOR [J].
TAUTFEST, GW ;
FECHTER, HR .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1955, 26 (02) :229-231
[7]   HIGH-ENERGY INTERFERENCE EFFECT OF BREMSSTRAHLUNG AND PAIR PRODUCTION IN CRYSTALS [J].
UBERALL, H .
PHYSICAL REVIEW, 1956, 103 (04) :1055-1067
[8]  
UBERALL H, 1958, CERN5821 REP