PHOTOVOLTAIC EFFECT IN AMORPHOUS-SILICON-ELECTROLYTE INTERFACE

被引：3

作者：

CHAN, YK

JAYADEVAIAH, TS

机构：

[1] UNIV WISCONSIN, LAB SURFACE STUDIES, MILWAUKEE, WI 53201 USA

[2] UNIV WISCONSIN, COLL ENGN & APPL SCI, MILWAUKEE, WI 53201 USA

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 12期

关键词：

D O I：

10.1063/1.1654533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：628 / 629

页数：2

共 10 条

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PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[3]

CHAN Y, TO BE PUBLISHED

[4]

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[5] INVERSIONSSCHICHTEN IN SILICIUM AN DER GRENZE ZU EINEM ELEKTROLYTEN [J].

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ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1961, 16 (12) :1401-1401

[6] AMORPHOUS-CRYSTALLINE SILICON JUNCTIONS [J].

JAYADEVAJAH, TS ;

BUSMUNDR.O .

ELECTRONICS LETTERS, 1972, 8 (03) :75-+

[7]

MOTT NF, 1971, ELECTRONIC PROCESSES

[8] TEMPERATURE-DEPENDENT TUNNELLING INTO AMORPHOUS SILICON [J].

SAUVAGE, JA ;

MOGAB, CJ ;

ADLER, D .

PHILOSOPHICAL MAGAZINE, 1972, 25 (06) :1305-+

[9]

Tauc J., 1970, Journal of Non-Crystalline Solids, V4, P279, DOI 10.1016/0022-3093(70)90052-9

[10]

WEY HY, 1972, J NONCRYSTALL SOLIDS, V8, P336

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