AB-INITIO CALCULATIONS OF THE BAND-OFFSET AT A ZNSE/ZNTE(100) INTERFACE

被引：4

作者：

FREYTAG, B

机构：

[1] Inst. fur Theor. Phys., Regensburg Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 03期

关键词：

D O I：

10.1088/0268-1242/10/3/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We use the density functional theory in the local density approximation and norm-conserving pseudopotentials to calculate the valence band offset (VBO) at a ZnSe/ZnTe interlace grown in the (100) direction. The obtained VBO value of 1.09 eV is in excellent agreement with the corresponding experimental data and with other calculations.

引用

收藏

页码：270 / 273

页数：4

相关论文

共 36 条

[1] BAND OFFSETS IN LATTICE-MATCHED HETEROJUNCTIONS - A MODEL AND 1ST-PRINCIPLES CALCULATIONS FOR GAAS/ALAS [J].

BALDERESCHI, A ;

BARONI, S ;

RESTA, R .

PHYSICAL REVIEW LETTERS, 1988, 61 (06) :734-737

[2]

BALDERESCHI A, 1993, NATO ADV RES WORKSHO

[3]

BALDERESCHI A, 1993, 117 P COURS INT SCH, P59

[4]

BARONI S, 1989, NATO ADV SCI I B-PHY, V206, P251

[5] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[6] DIPOLE EFFECTS AND BAND OFFSETS AT SEMICONDUCTOR INTERFACES [J].

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1988, 37 (09) :4528-4538

[7] THE OPTICAL AND SPECTROSCOPIC PROPERTIES OF II-VI-WIDE-GAP ZNSE/ZNS AND ZNSE/ZNTE STRAINED-LAYER SUPERLATTICES [J].

CUI, J ;

WANG, HL ;

GAN, FX .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :505-509

[8]

DREIZLER RM, 1990, DENSITY FUNCTIONAL M

[9] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[10] TOTAL-ENERGY CALCULATION FOR CDXSN1-XTE [J].

FREYTAG, B ;

ROSSLER, U ;

KARCH, K ;

GROSCH, GH ;

RANGE, KJ .

JOURNAL OF CHEMICAL PHYSICS, 1993, 99 (09) :6751-6755

← 1 2 3 4 →