MECHANISM OF PULSED LASER-INDUCED AMORPHIZATION OF SILICON FILMS

被引：43

作者：

SAMESHIMA, T

USUI, S

机构：

[1] Sony Research Center, Hodogaya-ku, Yokohama 240

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 21期

关键词：

D O I：

10.1063/1.105896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphization and crystallization were studied through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30 ns XeCl excimer laser. The crystalline nucleation rate was obtained to be 8 X 10(30) m-3 s-1. Silicon films were completely amorphized for films thinner than 18 nm due to the fact that grain growth is reduced as film thickness decreases. It was also experimentally determined that recalescence caused by latent heat released at solidification can cause grain growth.

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页码：2724 / 2726

页数：3

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