INGAAS/INGAASP INTEGRATED TUNABLE DETECTOR GROWN BY CHEMICAL BEAM EPITAXY

被引：7

作者：

CHOA, FS ^{[1
]}

TSANG, WT ^{[1
]}

LOGAN, RA ^{[1
]}

GNALL, RP ^{[1
]}

KOCH, TL ^{[1
]}

BURRUS, CA ^{[1
]}

WU, MC ^{[1
]}

CHEN, YK ^{[1
]}

KAPRE, R ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 13期

关键词：

D O I：

10.1063/1.110678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry-Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.

引用

页码：1836 / 1838

页数：3

共 6 条

[1] OPTOELECTRONIC PROPERTIES OF INGAAS/INGAASP MULTIPLE-QUANTUM-WELL WAVE-GUIDE DETECTORS [J].