THE GROWTH OF INAS1-XSBX INAS STRAINED-LAYER SUPERLATTICES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

InAs1-xSbx/InAs strained-layer superlattice (SLS) semiconductors and thick epitaxial layers of InAs1-xSbx were grown under a variety of conditions by metalorganic chemical vapor deposition on InAs substrates. The III/V ratio was varied from 0.026 to 1.0 over a temperature range of 475-525-degrees-C, at pressures of 200 to 660 Torr and growth rates of 0.75 to 3.0 mum/h. The composition of the ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. These layers were characterized by optical microscopy, secondary ion mass spectroscopy (SIMS), and X-ray diffraction. The optical properties of these SLSs were determined by infrared photoluminescence and absorption measurements.