SELF-CONSISTENT PROCEDURE FOR POINT-DEFECTS IN TIGHT-BINDING SYSTEMS - APPLICATION TO SEMICONDUCTORS

被引：21

作者：

LANNOO, M ^{[1
]}

机构：

[1] INST SUPER ELECTR N,CNRS,EQUIPE RECH PHYS SOLIDES,3 RUE FRANCOIS BAES,F-59046 LILLE,FRANCE

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.10.2544

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2544 / 2553

页数：10

共 56 条

[1] BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
BALDERESCHI, A
HOPFIELD, JJ
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (03) : 171 - +
[2] LOCALIZED DEFECTS IN SEMICONDUCTORS
CALLAWAY, J
HUGHES, AJ
[J]. PHYSICAL REVIEW, 1967, 156 (03): : 860 - +
[3] Coulson C. A., 1962, P ROY SOC LONDON, V270, P352
[4] ISOLATED SINGLE VACANCY IN DIAMOND .1. ELECTRONIC STRUCTURE
COULSON, CA
LARKINS, FP
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) : 2245 - &
[5] COLOUR CENTRES IN IRRADIATED DIAMONDS .1.
COULSON, CA
KEARSLEY, MJ
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227): : 433 - 454
[6] STUDY OF CHARGE-TRANSFER IN III-V AND II-VI COMPOUNDS BY A TIGHT-BINDING METHOD
DECARPIGNY, JN
LANNOO, M
[J]. JOURNAL DE PHYSIQUE, 1973, 34 (07): : 651 - 659
[7] DECARPIGNY JN, 1973, J PHYS, V34, P61
[8] Ewald PP, 1921, ANN PHYS-BERLIN, V64, P253
[9] EWALD PP, 1937, GOTTINGER NACHR MP, V3, P55
[10] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
FAULKNER, RA
[J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &