HIGH-PRESSURE EFFECTS IN LAYER SEMICONDUCTORS

被引：27

作者：

BESSON, JM ^{[1
]}

机构：

[1] UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75230 PARIS 05, FRANCE

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS | 1977年 / 38卷 / 02期

关键词：

D O I：

10.1007/BF02723520

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：478 / 485

页数：8

共 17 条

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[4]

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SHEN, YR ;

COHEN, ML .

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[7] PHASE-TRANSITION IN LEAD IODIDE UNDER HYDROSTATIC-PRESSURE [J].

CARILLON, C ;

MARTINEZ, G .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 38 (02) :496-502

[8] OPTICAL STUDIES OF TRANSITION-METAL DICHALCOGENIDE LAYER CRYSTALS AT HIGH-PRESSURES [J].

GRANT, AJ ;

WILSON, JA ;

YOFFE, AD .

PHILOSOPHICAL MAGAZINE, 1972, 25 (03) :625-+

[9]

LAISAAR AI, 1973, PROBORY TECHNIKA EKS, V1, P224

[10]

LETOULLEC R, TO BE PUBLISHED

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