HIGH-PERFORMANCE SUBQUARTER-MICROMETER GATE CMOS TECHNOLOGY

Subquarter-micrometer gate-length CMOS devices have been designed and fabricated. A single phosphorous-doped poly(n+)-Si gate and a 3.5-nm-thick gate oxide are used, and a retrograde twin-well structure with trench isolation has been adopted. Latch-up holding voltages exceed 8 V. The transconductances of 0.22-μm gate-length n and p MOSFET's are 450 and 330 mS/mm, and unloaded ring oscillator delays are 36 ps at 2 V. A static-type 1/2 divider that has nMOSFET's of 0.16-μm gate length and pMOSFET's of 0.22-μm gate length achieved a maximum operating frequency of 1.3 GHz and power of 5.6 mW at a supply voltage of 2 V. © 1990 IEEE