ARTIFICIAL EPITAXY (DIATAXY) OF SILICON AND GERMANIUM

被引：17

作者：

KLYKOV, VI ^{[1
]}

SHEFTAL, NN ^{[1
]}

HARTMANN, E ^{[1
]}

机构：

[1] HUNGARIAN ACAD SCI,CRYSTAL PHYS RES LAB,H-1361 BUDAPEST 5,HUNGARY

来源：

ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE | 1979年 / 47卷 / 1-3期

关键词：

D O I：

10.1007/BF03156522

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The artificial epitaxy (diataxy) of silicon and germanium on amorphous quartz substrates was investigated in order to determine the best type of relief pattern, the mechanism of orientation and other regularities of the process. © 1979 with the authors.

引用

页码：167 / 183

页数：17

共 12 条

[1]

GARJAINOV SA, 1975, DIELECTRICAL ISOLATI, P49

[2]

GIVARGIZOV EI, 1977, GROWTH WHISKERS LAME

[3] ON THE ORIENTATION EFFECT OF CAPILLARY FORCES [J].

HARTMANN, E ;

SHEFTAL, NN ;

KLYKOV, VI .

ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1979, 47 (1-3) :185-188

[4]

KLYKOV VI, 1976, VINITI642 DEP

[5]

KLYKOV VI, 1977, PROTSESSY REALNOGO K, P144

[6]

KLYKOV VI, 1978, VESTNIK MGU G, P115

[7]

NAIDICH IV, 1975, PHYSICAL CHEM CONDEN, P3

[8]

Sheftal' N. N., 1972, VESTN MOSK U G, P102

[9]

SHEFTAL NN, 1977, MECHANISM KINETICS C, V1, P31

[10]

SHEFTAL NN, 1974, GROWTH CRYSTALS, V10, P195

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