SURFACE BAND-STRUCTURE CALCULATION FOR GAAS(111)2X2

被引:8
作者
HENK, J
SCHATTKE, W
机构
关键词
D O I
10.1016/0038-1098(89)90372-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:683 / 686
页数:4
相关论文
共 23 条
[1]   RECURSION, NONORTHOGONAL BASIS VECTORS, AND THE COMPUTATION OF ELECTRONIC-PROPERTIES [J].
BALLENTINE, LE ;
KOLAR, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (07) :981-993
[2]   COMPARISON BETWEEN THE ELECTRONIC-STRUCTURES OF GAAS(111) AND GAAS(111) FROM ANGLE-RESOLVED PHOTOEMISSION [J].
BRINGANS, RD ;
BACHRACH, RZ .
PHYSICAL REVIEW LETTERS, 1984, 53 (20) :1954-1957
[3]  
BRINGANS RD, 1985, 1ST P INT C STRUCT S, P30
[4]   INTRINSIC (111) SURFACE STATES OF GE, GAAS, AND ZNSE [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1975, 11 (02) :732-737
[5]   VACANCY-INDUCED 2X2 RECONSTRUCTION OF THE GA(111) SURFACE OF GAAS [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1984, 52 (21) :1911-1914
[6]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[7]   SURFACE STUDIES OF GAAS(111) AND GAAS(111) USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY, X-RAY PHOTOELECTRON-SPECTROSCOPY, AND LOW-ENERGY ELECTRON-DIFFRACTION [J].
FRANKEL, DJ ;
ANDERSON, J ;
LAPEYRE, GJ ;
FARRELL, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1093-1096
[8]   SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].
HANEMAN, D .
PHYSICAL REVIEW, 1961, 121 (04) :1093-&
[9]  
HENK J, IN PRESS PHYS REV B
[10]   AN EXTENDED HUCKEL THEORY .I. HYDROCARBONS [J].
HOFFMANN, R .
JOURNAL OF CHEMICAL PHYSICS, 1963, 39 (06) :1397-&